- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Id - Continuous Drain Current :
-
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- 9 A (2)
- 9.1 A (2)
- 9.4 A (1)
- 9.5 A (1)
- 90 A (3)
- 96 A (1)
- 97 A (3)
- Rds On - Drain-Source Resistance :
-
- 0.0071 Ohms (1)
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- 10 mOhms (2)
- 10.2 mOhms (1)
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- 150 mOhms (4)
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- 16 mOhms (4)
- 175 mOhms (1)
- 18 mOhms (8)
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- 185 mOhms (3)
- 19 mOhms (2)
- 190 mOhms (5)
- 20 mOhms (3)
- 200 mOhms (1)
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- 22.5 mOhms (3)
- 220 mOhms (1)
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- 24 mOhms (2)
- 25 mOhms (3)
- 25.8 mOhms (2)
- 26 mOhms (2)
- 260 mOhms (1)
- 265 mOhms (3)
- 28 mOhms (4)
- 28.5 mOhms (2)
- 3.2 mOhms (2)
- 3.9 mOhms (3)
- 30 mOhms (2)
- 31 mOhms (1)
- 32 mOhms (2)
- 33 mOhms (1)
- 34 mOhms (1)
- 35 mOhms (2)
- 350 mOhms (2)
- 36 mOhms (4)
- 37 mOhms (1)
- 38 mOhms (1)
- 39 mOhms (2)
- 4.1 mOhms (1)
- 4.2 mOhms (1)
- 4.3 mOhms (1)
- 4.5 mOhms (2)
- 4.7 mOhms (1)
- 4.8 mOhms (5)
- 41 mOhms (1)
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- 48 mOhms (1)
- 5.5 mOhms (1)
- 5.6 mOhms (1)
- 5.7 mOhms (1)
- 5.8 mOhms (2)
- 55 mOhms (1)
- 6.8 mOhms (1)
- 63 mOhms (1)
- 64 mOhms (2)
- 65 mOhms (1)
- 69 mOhms (1)
- 7 mOhms (3)
- 7.2 mOhms (1)
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- 8 mOhms (3)
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- 9 mOhms (2)
- 9.3 mOhms (1)
- 9.7 mOhms (1)
- 9.8 mOhms (2)
- 90 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 100 nC (1)
- 120 nC (6)
- 13.3 nC (8)
- 13.4 nC (1)
- 130 nC (2)
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- 16 nC (1)
- 16.7 nC (3)
- 170 nC (4)
- 18 nC (2)
- 19 nC (2)
- 20 nC (1)
- 22.2 nC (1)
- 22.7 nC (8)
- 23 nC (1)
- 24.7 nC (1)
- 25 nC (5)
- 25.2 nC (2)
- 29.3 nC (3)
- 3.61 nC (1)
- 31 nC (2)
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- 36 nC (2)
- 37 nC (4)
- 38 nC (1)
- 39 nC (5)
- 40 nC (2)
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- 48 nC (2)
- 49 nC (3)
- 49.3 nC (1)
- 5.4 nC (1)
- 53 nC (1)
- 54 nC (3)
- 55 nC (2)
- 56 nC (1)
- 59 nC (1)
- 6.9 nC (4)
- 61 nC (2)
- 65 nC (1)
- 68 nC (1)
- 69 nC (4)
- 70 nC (2)
- 71 nC (1)
- 73.3 nC (2)
- 76 nC (2)
- 8 nC (1)
- 81 nC (2)
- 83 nC (2)
- 86.7 nC (2)
- 87 nC (4)
- 9.6 nC (1)
- 9.7 nC (1)
- 9.8 nC (1)
- 90 nC (4)
- 93 nC (3)
- 93.3 nC (3)
- 98 nC (2)
- Applied Filters :
186 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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2,518
In-stock
|
Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 10.5 mOhms | 2 V | 35 nC | Enhancement | ||||
|
|
35,820
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 11.1 mOhms | Enhancement | OptiMOS | |||||
|
|
21,735
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 15 mOhms | Enhancement | OptiMOS | |||||
|
|
GET PRICE |
15,988
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 30 A | 25.8 mOhms | 1.2 V | 31 nC | Enhancement | OptiMOS | ||
|
|
55,270
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel Power Trench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.2 A | 36 mOhms | Enhancement | PowerTrench | |||||
|
|
3,304
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PwrTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.5 A | 36 mOhms | Enhancement | PowerTrench | |||||
|
|
3,714
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8 A | 19 mOhms | 3.1 V | 13.4 nC | PowerTrench | ||||
|
|
7,083
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 31 mOhms | 18 nC | PowerTrench | |||||||
|
|
4,300
In-stock
|
STMicroelectronics | MOSFET N-Ch, 100V-0.015ohms 60A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 15 mOhms | Enhancement | ||||||
|
|
5,320
In-stock
|
Fairchild Semiconductor | MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 20 A | 41.5 mOhms | Enhancement | ||||||
|
|
GET PRICE |
28,010
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 56A 18mOhm 69nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 4 V | 100 nC | ||||||
|
|
7,603
In-stock
|
IR / Infineon | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12 mOhms | 2.5 V | 34 nC | |||||
|
|
4,086
In-stock
|
Fairchild Semiconductor | MOSFET 100V 44a .28 Ohms/VGS=1V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 28 mOhms | Enhancement | UltraFET | |||||
|
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2,460
In-stock
|
Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 32 mOhms | 4 V | 53 nC | Enhancement | PowerTrench | |||
|
|
1,887
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 12.5 A | 10.2 mOhms | 25 nC | Enhancement | PowerTrench | ||||
|
|
2,569
In-stock
|
Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 34 A | 22 mOhms | Enhancement | PowerTrench | |||||
|
|
4,557
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 20 mOhms | 1.2 V | 39 nC | Enhancement | OptiMOS | |||
|
|
3,275
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 15 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 65 mOhms | Enhancement | ||||||
|
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4,351
In-stock
|
Infineon Technologies | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 22.5 mOhms | 4 V | 39 nC | |||||
|
|
4,133
In-stock
|
onsemi | MOSFET NFET DPAK 100V 17A 106MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 19 A | 74 mOhms | 25 nC | Enhancement | |||||
|
|
2,261
In-stock
|
STMicroelectronics | MOSFET Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 4.5 V | 14 nC | |||||
|
|
14,150
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 73A 14mOhm 90nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 73 A | 14 mOhms | 90 nC | ||||||||
|
|
3,298
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 10mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 88 A | 8 mOhms | 4 V | 120 nC | Enhancement | ||||
|
|
4,481
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 100 V | 35 A | 19 mOhms | 3 V | 23 nC | Enhancement | |||||
|
|
2,156
In-stock
|
STMicroelectronics | MOSFET N Ch 100V 0.033 Ohm 25A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 38 mOhms | Enhancement | ||||||
|
|
2,633
In-stock
|
Infineon Technologies | MOSFET 100V 97A 9mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 9 mOhms | 2 V to 4 V | 83 nC | Enhancement | ||||
|
|
3,554
In-stock
|
STMicroelectronics | MOSFET AC Pwr switch | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 28 mOhms | Enhancement | ||||||
|
|
2,400
In-stock
|
Infineon Technologies | MOSFET MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 5.8 mOhms | 1.1 V | 98 nC | Enhancement | ||||
|
|
3,930
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 14 mOhms | 2.5 V | 48 nC | |||||||
|
|
2,635
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.1 A | 18 mOhms | 4 V | 69 nC | Enhancement |
