- Manufacture :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
3,132
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | Enhancement | OptiMOS | ||||
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VIEW | onsemi | MOSFET NCH 4.5V DRIVE SERIES | SMD/SMT | ATPAK-3 | Reel | Si | N-Channel | 60 V | 100 A | 3.7 mOhms | |||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | |||||||||||
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GET PRICE |
575
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | 99 nC | OptiMOS | ||||
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GET PRICE |
1,410
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | 1.2 V | 110 nC | Enhancement | OptiMOS | ||
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GET PRICE |
490
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS-T2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.7 mOhms | OptiMOS |
