- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,482
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Ch Logic PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 5.5 mOhms | Enhancement | PowerTrench | |||||
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3,591
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 86 A | 5.5 mOhms | 36 nC | Enhancement | Directfet | ||||
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1,246
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | |||
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49
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement | ||||
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2,692
In-stock
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onsemi | MOSFET POWER MOSFET | 20 V | SMD/SMT | ATPAK-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 95 A | 5.5 mOhms |
