- Manufacture :
- Package / Case :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,405
In-stock
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IR / Infineon | MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 7.1 mOhms | 46 nC | |||||||
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1,428
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 7.1 mOhms | 46 nC | |||||||
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933
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 79 A | 7.1 mOhms | 46 nC | |||||||
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822
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 79 A | 7.1 mOhms | 46 nC | |||||||
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GET PRICE |
38,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.1 mOhms | 2 V | 47 nC | Enhancement |
