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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	FDD10AN06A0	1+ $1.700 10+ $1.450 100+ $1.160 500+ $1.020 2500+ $0.780		PDF RFQ	3,229 In-stock	Fairchild Semiconductor	MOSFET 60V 50a .15 Ohms/VGS=1V	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	50 A	9.4 mOhms			Enhancement	PowerTrench
	IRF7855PBF	1+ $1.540 10+ $1.320 100+ $1.010 500+ $0.890		PDF RFQ	2,588 In-stock	IR / Infineon	MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC	20 V	SMD/SMT	SO-8			Tube	1 Channel	Si	N-Channel	60 V	12 A	9.4 mOhms		26 nC
	FDD10AN06A0_F085	1+ $1.440 10+ $1.230 100+ $0.944 500+ $0.834 2500+ $0.584		PDF RFQ	506 In-stock	Fairchild Semiconductor	MOSFET 60V, 50A, 10.5mOhm Power Trench MOSFET	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	50 A	9.4 mOhms	4 V	28 nC

FDD10AN06A0

FDD10AN06A0

Fairchild Semiconductor

MOSFET 60V 50a .15 Ohms/VGS=1V

Stock : 3,229

1+: $1.700

10+: $1.450

100+: $1.160

500+: $1.020

2500+: $0.780

IRF7855PBF

IRF7855PBF

IR / Infineon

MOSFET 60V 1 N-CH HEXFET 9.4mOhms 26nC

Stock : 2,588

1+: $1.540

10+: $1.320

100+: $1.010

500+: $0.890

FDD10AN06A0_F085

FDD10AN06A0_F085

Fairchild Semiconductor

MOSFET 60V, 50A, 10.5mOhm Power Trench MOSFET

Stock : 506

1+: $1.440

10+: $1.230

100+: $0.944

500+: $0.834

2500+: $0.584

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