- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
33 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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26,157
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | |||||
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8,790
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 46A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 8 mOhms | 2.1 V | 15 nC | Enhancement | |||||
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4,898
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | |||||
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3,206
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.1 mOhms | 2.1 V | 83 nC | Enhancement | |||||
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4,027
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | |||||
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4,393
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 1.2 mOhms | 2.1 V | 104 nC | Enhancement | OptiMOS | ||||
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4,109
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 5.6 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | ||||
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4,930
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.5 mOhms | 2.1 V | 15 nC | Enhancement | OptiMOS | ||||
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4,973
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | OptiMOS | ||||
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2,283
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.5 mOhms | 2.1 V | 15 nC | Enhancement | |||||
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1,858
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 4.9 mOhms | 2.1 V | 32 nC | Enhancement | |||||
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1,771
In-stock
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IR / Infineon | MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 58 A | 8 mOhms | 2.1 V | 40 nC | Enhancement | StrongIRFET | ||||
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778
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | ||||
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1,202
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 46A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 8 mOhms | 2.1 V | 15 nC | Enhancement | OptiMOS | ||||
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1,739
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 2.9A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.9 A | 90 mOhms | 2.1 V | 12 nC | Enhancement | |||||
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1,246
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | ||||
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150
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.1 mOhms | 2.1 V | 83 nC | Enhancement | OptiMOS | ||||
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906
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 2.9A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.9 A | 90 mOhms | 2.1 V | 12 nC | Enhancement | |||||
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49
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement | |||||
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34
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.2 mOhms | 2.1 V | 124 nC | Enhancement | |||||
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21
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.3 mOhms | 2.1 V | 66 nC | Enhancement | |||||
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14,957
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 2.1 V | 49 nC | Enhancement | |||||
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15,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 2.1 V | 49 nC | Enhancement | OptiMOS | ||||
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14,860
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.3 mOhms | 2.1 V | 32 nC | Enhancement | |||||
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14,975
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 40A TDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 3.4 mOhms | 2.1 V | 32 nC | Enhancement | |||||
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2,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 800 uOhms | 2.1 V | 243 nC | Enhancement | |||||
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4,990
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 40A TDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 3.4 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | ||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 4.5 mOhms | 2.1 V | 32 nC | Enhancement | |||||
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10,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.3 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | ||||
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1,967
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 800 uOhms | 2.1 V | 243 nC | Enhancement | OptiMOS |