- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,709
In-stock
|
IR / Infineon | MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 7.3 mOhms | 2.1 V | 44 nC | Enhancement | StrongIRFET | ||||
|
356
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.8 mOhms | 2.1 V | 124 nC | Enhancement | |||||
|
685
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | |||||
|
908
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 5.2 mOhms | 2.1 V | 32 nC | Enhancement | |||||
|
243
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.8 mOhms | 2.1 V | 124 nC | Enhancement | OptiMOS | ||||
|
494
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 100A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.7 mOhms | 2.1 V | 66 nC | Enhancement | OptiMOS | ||||
|
23
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.6 mOhms | 2.1 V | 44 nC | Enhancement | |||||
|
564
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 5.2 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | ||||
|
52
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.6 mOhms | 2.1 V | 44 nC | Enhancement | OptiMOS |