- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
780
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-channel LL PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 2.2 mOhms | 3.2 V | 12 nC | Enhancement | |||
|
|
1,739
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.9A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.9 A | 90 mOhms | 2.1 V | 12 nC | Enhancement | |||
|
|
906
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.9A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.9 A | 90 mOhms | 2.1 V | 12 nC | Enhancement | |||
|
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 12 nC | Enhancement | |||
|
|
2,285
In-stock
|
Toshiba | MOSFET N-Ch 60V 21A 18W UMOSVIII 710pF 12nC | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 21 A | 18 mOhms | 2 V to 4 V | 12 nC | Enhancement |
