- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,775
In-stock
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Fairchild Semiconductor | MOSFET 60V 240A TO-LL N-Chnl PowerTrench | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 2.9 mOhms | 2 V | 130 nC | Enhancement | PowerTrench | |||
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1,974
In-stock
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Fairchild Semiconductor | MOSFET Update code D | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 2.9 mOhms | 2 V | 130 nC | Enhancement | PowerTrench | |||
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4,074
In-stock
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IR / Infineon | MOSFET MOSFT 60V 83A 12mOhm 86.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 84 A | 12 mOhms | 4 V | 130 nC | |||||
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797
In-stock
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Infineon Technologies | MOSFET 60V Single N-Channel HEXFET Power | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 5.1 mOhms | 3.7 V | 130 nC | Enhancement | StrongIRFET | |||||
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VIEW | Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 86 A | 2.7 mOhms | 4 V | 130 nC | Enhancement | StrongIRFET | ||||
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677
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 110 A | 4 mOhms | 2.1 V | 130 nC | Enhancement | StrongIRFET |
