MOSFET - Kaimeite

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3 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Qg - Gate Charge	Channel Mode	Tradename
	IRF6648TRPBF	1+ $2.430 10+ $2.180 100+ $1.750 500+ $1.440 4800+ $1.030		PDF RFQ	3,591 In-stock	IR / Infineon	MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC	20 V	SMD/SMT	DirectFET-MN	- 40 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	86 A	5.5 mOhms	36 nC	Enhancement	Directfet
	IRF6674TRPBF	1+ $2.720 10+ $2.310 100+ $1.850 250+ $1.760 4800+ $1.170		PDF RFQ	965 In-stock	IR / Infineon	MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC	20 V	SMD/SMT	DirectFET-MZ	- 40 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	67 A	9 mOhms	24 nC	Enhancement	Directfet
	BSB028N06NN3 G	1+ $1.840 10+ $1.560 100+ $1.250 500+ $1.100 5000+ $0.812		PDF RFQ	10,000 In-stock	Infineon Technologies	MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3	20 V	SMD/SMT	WDSON-2-3	- 40 C	+ 150 C	Reel	1 Channel	Si	N-Channel	60 V	90 A	2.8 mOhms	108 nC		OptiMOS

IRF6648TRPBF

IRF6648TRPBF

IR / Infineon

MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC

Stock : 3,591

1+: $2.430

10+: $2.180

100+: $1.750

500+: $1.440

4800+: $1.030

IRF6674TRPBF

IRF6674TRPBF

IR / Infineon

MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC

Stock : 965

1+: $2.720

10+: $2.310

100+: $1.850

250+: $1.760

4800+: $1.170

BSB028N06NN3 G

BSB028N06NN3 G

Infineon Technologies

MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3

Stock : 10,000

1+: $1.840

10+: $1.560

100+: $1.250

500+: $1.100

5000+: $0.812

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