MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	FDB060AN08A0	1+ $3.900 10+ $3.310 100+ $2.870 250+ $2.720 800+ $2.060		PDF RFQ	1,114 In-stock	Fairchild Semiconductor	MOSFET Discrete Auto N-Ch PowerTrench	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	75 V	80 A	4.8 mOhms			Enhancement	PowerTrench
	IPB80N08S2L-07	1+ $2.640 10+ $2.240 100+ $1.800 500+ $1.570 1000+ $1.300		PDF RFQ	880 In-stock	Infineon Technologies	MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	75 V	80 A	4.8 mOhms	1.2 V	233 nC	Enhancement	OptiMOS
	IPB80N08S2L07ATMA1	1+ $2.640 10+ $2.240 100+ $1.800 500+ $1.570 1000+ $1.300		PDF RFQ	988 In-stock	Infineon Technologies	MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	75 V	80 A	4.8 mOhms	1.2 V	233 nC	Enhancement

FDB060AN08A0

FDB060AN08A0

Fairchild Semiconductor

MOSFET Discrete Auto N-Ch PowerTrench

Stock : 1,114

1+: $3.900

10+: $3.310

100+: $2.870

250+: $2.720

800+: $2.060

IPB80N08S2L-07

IPB80N08S2L-07

Infineon Technologies

MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS

Stock : 880

1+: $2.640

10+: $2.240

100+: $1.800

500+: $1.570

1000+: $1.300

IPB80N08S2L07ATMA1

IPB80N08S2L07ATMA1

Infineon Technologies

MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS

Stock : 988

1+: $2.640

10+: $2.240

100+: $1.800

500+: $1.570

1000+: $1.300

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