- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,584
In-stock
|
IR / Infineon | MOSFET 500V 3.5A 2.2Ohm MotIRFET | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.85 Ohms | 20 nC | ||||||||
|
42
In-stock
|
IXYS | MOSFET POWER MOSFET N-CHANNEL 500V 8A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 800 mOhms | 5.5 V | 20 nC | Enhancement | PolarHV | ||||
|
77
In-stock
|
Toshiba | MOSFET N-Ch MOS 10A 500V 45W 1050pF 0.72 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 500 V | 10 A | 620 mOhms | 20 nC | |||||||||||
|
355
In-stock
|
IR / Infineon | MOSFET 500V 3.6A 1.85 Ohm 75ns HEXFET ZeroSMPS | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 1.85 Ohms | 20 nC |