- Mounting Style :
- Package / Case :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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768
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 3.9 mOhms | Enhancement | PowerTrench | |||||
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542
In-stock
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IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 3.9 mOhms | 1 V | 56 nC | Enhancement | ||||
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261
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.9 mOhms | Enhancement | OptiMOS | |||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Ch PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 3.9 mOhms | Enhancement | PowerTrench | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.9 mOhms | Enhancement | OptiMOS |
