- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,021
In-stock
|
STMicroelectronics | MOSFET N-Ch 40 Volt 120 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 4.6 mOhms | Enhancement | |||||||
|
33,600
In-stock
|
Infineon Technologies | MOSFET 40V 120A 2.5 mOhm HEXFET 90nC 208W | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 135 nC | Enhancement | StrongIRFET | |||||||
|
20,100
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 120A 5.5mOhm 68nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 5.5 mOhms | 68 nC | |||||||||
|
445
In-stock
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 5.5 mOhms | 68 nC | Enhancement | |||||||
|
GET PRICE |
4,110
In-stock
|
Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.9mOhm 120A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | |||
|
536
In-stock
|
Infineon Technologies | MOSFET MOSFET, 40V, 120A, 2 90 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 135 nC | Enhancement | StrongIRFET | |||||||
|
174
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.9mOhm 120A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | ||||
|
93
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.5 mOhms | OptiMOS | ||||||||||
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.5 mOhms | OptiMOS | ||||||||||
|
VIEW | IXYS | MOSFET 120 Amps 40V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 6.1 mOhms | 4 V | 58 nC | Enhancement | TrenchT2 | ||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | Enhancement | OptiMOS | ||||||
|
472
In-stock
|
STMicroelectronics | MOSFET N-CH 40V 120A STripFET VI DeepGATE | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.8 mOhms | 4.5 V | 340 nC | ||||||
|
423
In-stock
|
STMicroelectronics | MOSFET N-CH 40V 120A STripFET VI DeepGATE | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.7 mOhms | 4.5 V | 377 nC | ||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 40 Volt 120 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 3.7 mOhms | Enhancement | |||||||
|
433
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.88 mOhms | 2 V | 134 nC | Enhancement | OptiMOS | ||||
|
357
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.88 mOhms | 2 V | 134 nC | Enhancement |