- Manufacture :
- Rds On - Drain-Source Resistance :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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695
In-stock
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Fairchild Semiconductor | MOSFET 40V N-CH PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 12 A | 8.7 mOhms | Enhancement | PowerTrench | |||||
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5,230
In-stock
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Texas instruments | MOSFET 40-V, N-Chanel NxFT Pwr MOSFETs | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.3 mOhms | 1.8 V | 52 nC | NexFET | ||||
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290
In-stock
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Texas instruments | MOSFET 40V N-Ch NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 10 mOhms | 1.9 V | 19 nC | NexFET | ||||
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366
In-stock
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Texas instruments | MOSFET 40V N-Ch NexFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 6.8 mOhms | 1.9 V | 30 nC | NexFET |
