- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
28 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,279
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | ||||
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3,933
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 11 A | 115 mOhms | Enhancement | |||||||
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899
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 100V 11A 5-Pin | 20 V | Through Hole | TO-220FP-5 | - 55 C | Tube | 2 Channel | Si | N-Channel | 100 V | 11 A | 58 mOhms | 12 nC | Enhancement | |||||||
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725
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 11A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 500 mOhms | Enhancement | CoolMOS | ||||||
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5,210
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 45 nC | CoolMOS | |||||
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237
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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147
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 3 V | 45 nC | CoolMOS | |||||
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370
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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546
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 11A 110mOhm 29.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 11 A | 110 mOhms | 29.3 nC | |||||||||
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340
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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330
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | ||||
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480
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A TO220FP CoolMOS CFD | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 440 mOhms | Enhancement | CoolMOS | ||||||
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113
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 299 mOhms | Enhancement | CoolMOS | ||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | ||||
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342
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | ||||
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300
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 440 mOhms | Enhancement | CoolMOS | ||||||
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5,160
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 11 A | 115 mOhms | Enhancement | |||||||
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2
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 11A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 500 mOhms | 68 nC | Enhancement | CoolMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 11A TO220-3 CoolMOS S5 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | ||||
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266
In-stock
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Infineon Technologies | MOSFET 650V CoolMOS C7 Power Trans; 225mOhm | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 4.5 V | 41.5 nC | CoolMOS | |||||
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VIEW | IXYS | MOSFET 11 Amps 800V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 950 mOhms | Enhancement | HyperFET | ||||||
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134
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A I2PAK-3 CoolMOS S5 | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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120
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 3 V | 60 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 11A I2PAK-3 CoolMOS C3 | 20 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CFD | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 440 mOhms | Enhancement | CoolMOS |