- Manufacture :
- Rds On - Drain-Source Resistance :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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725
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 11A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 500 mOhms | Enhancement | CoolMOS | |||||
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370
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | |||||
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113
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 299 mOhms | Enhancement | CoolMOS | |||||
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300
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO247-3 CoolMOS CFD | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 440 mOhms | Enhancement | CoolMOS | |||||
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VIEW | IXYS | MOSFET 11 Amps 800V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 950 mOhms | Enhancement | HyperFET | |||||
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120
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 3 V | 60 nC | Enhancement |
