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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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800
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 9 mOhms | 93.3 nC | Enhancement | ||||
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1,104
In-stock
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Infineon Technologies | MOSFET MOSFT 140A 50.7nC 5.5mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 140 A | 7.5 mOhms | 50.7 nC | |||||||
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547
In-stock
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IR / Infineon | MOSFET MOSFT 30V 140A 6mOhm 93.3nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 140 A | 9 mOhms | 1 V | 140 nC | ||||
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VIEW | Infineon Technologies | MOSFET MOSFT 30V 140A 5.5mOhm 50.7nC LogLv | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 140 A | 7.5 mOhms | 50.7 nC | |||||||
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336
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6mOhms 93.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 140 A | 9 mOhms | 93.3 nC | Enhancement |
