- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,239
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 2250mOhm Zener | 20 V, 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.6 A | 2.25 Ohms | 2.5 V | 11 nC | Enhancement | SuperFET II | |||
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18,740
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.6 A | 7.96 Ohms | 2.5 V | 4.6 nC | Enhancement | CoolMOS | |||
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1,204
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | |||
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1,191
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | |||
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6
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | |||
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10
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement |
