- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,068
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.6 A | 70 mOhms | 1.5 V | 4.6 nC | Enhancement | ||||
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4,000
In-stock
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onsemi | MOSFET 2.6A, 52V N-CH, CLAM | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 95 mOhms | 1.5 V | 4.5 nC | |||||
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10,000
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.6 A | 70 mOhms | 1.5 V | 4.6 nC | Enhancement | PowerDI |
