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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,765
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | |||
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3,745
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement |
