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10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,763
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 2.6A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.6 A | 70 mOhms | 1.2 V | 20 nC | Enhancement | |||||
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2,023
In-stock
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Fairchild Semiconductor | MOSFET PT5 100/20V Nch PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.6 A | 198 mOhms | 1 V | 3.8 nC | Enhancement | PowerTrench | ||||
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2,659
In-stock
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Fairchild Semiconductor | MOSFET 15a 55V N-Channel UltraFET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 90 mOhms | Enhancement | UltraFET | ||||||
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1,936
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 2.6A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.6 A | 70 mOhms | 1.2 V | 20 nC | Enhancement | |||||
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1,524
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 125 mOhms | Enhancement | PowerTrench | ||||||
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18,740
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.6 A | 7.96 Ohms | 2.5 V | 4.6 nC | Enhancement | CoolMOS | ||||
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2,765
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | |||||
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3,745
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | |||||
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6
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement | CoolMOS | ||||
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10
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 1.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.6 A | 2.7 Ohms | 2.5 V | 4.3 nC | Enhancement |