- Manufacture :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
8,763
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.6A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.6 A | 70 mOhms | 1.2 V | 20 nC | Enhancement | ||||
|
|
2,659
In-stock
|
Fairchild Semiconductor | MOSFET 15a 55V N-Channel UltraFET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 90 mOhms | Enhancement | UltraFET | |||||
|
|
1,936
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.6A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.6 A | 70 mOhms | 1.2 V | 20 nC | Enhancement | ||||
|
|
1,242
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 185mOhms 12nC | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 2.6 A | 185 mOhms | 12 nC | Enhancement | |||||
|
|
18,740
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.6 A | 7.96 Ohms | 2.5 V | 4.6 nC | Enhancement | CoolMOS | |||
|
|
2,259
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 2.6A 185mOhm 12nC | 30 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 150 V | 2.6 A | 185 mOhms | 12 nC |
