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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB039N10N3 G
1+
$2.550
10+
$2.160
100+
$1.730
500+
$1.520
1000+
$1.260
RFQ
1,254
In-stock
Infineon Technologies MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 20 V SMD/SMT TO-263-7 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 160 A 3.3 mOhms 2 V 117 nC Enhancement OptiMOS
IRFS3306TRLPBF
1+
$2.110
10+
$1.800
100+
$1.440
500+
$1.260
800+
$1.040
RFQ
1,457
In-stock
Infineon Technologies MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 160 A 3.3 mOhms 4 V 85 nC    
IPB039N10N3GATMA1
1+
$2.550
10+
$2.160
100+
$1.730
500+
$1.520
1000+
$1.260
RFQ
128
In-stock
Infineon Technologies MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 160 A 3.3 mOhms 2 V 117 nC Enhancement OptiMOS
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