- Manufacture :
- Mounting Style :
- Package / Case :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,198
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 1.1 A | 450 mOhms | Enhancement | |||||
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GET PRICE |
1,945
In-stock
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Diodes Incorporated | MOSFET 100V 1.4A N-Channel MOSFET H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 100 V | 1.1 A | 700 mOhms, 1 Ohms | 2 V | 2.9 nC, 3.5 nC | Enhancement | |||
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2,308
In-stock
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Fairchild Semiconductor | MOSFET 200V NCh PowerTrench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 1.1 A | 725 mOhms | Enhancement | PowerTrench | ||||
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2,732
In-stock
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Fairchild Semiconductor | MOSFET 30V Integrated NMOS and Shottky Diode | 5.5 V | SMD/SMT | WLCSP-4 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.1 A | 462 mOhms | 0.7 V | 1 nC | ||||
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GET PRICE |
4,990
In-stock
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Nexperia | MOSFET 80 V, N-channel Trench MOSFET | 20 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 80 V | 1.1 A | 345 mOhms | 1.7 V | 3 nC | Enhancement | ||||
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4,409
In-stock
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Fairchild Semiconductor | MOSFET NChannel Logic Level Enhancement Mode FET | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.1 A | 250 mOhms | Enhancement | |||||
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GET PRICE |
1,156
In-stock
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Diodes Incorporated | MOSFET 60V LO INPT CURR SELF PROT LO SD SWCH | - | SMD/SMT | SOT-223-3 | - 40 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.1 A | 520 mOhms | 1 V | - | Enhancement | IntelliFET | ||
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71
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 1.1 A | 450 mOhms | Enhancement |
