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18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,139
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 71 A | 10 mOhms | 1.2 V | 68 nC | Enhancement | OptiMOS | |||
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GET PRICE |
78,180
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | ||
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4,044
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.8 mOhms | 1 V | 30 nC | Enhancement | OptiMOS | |||
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1,414
In-stock
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onsemi | MOSFET NFET SO8FL 60V 71A 6.1MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 8.8 mOhms | 1.2 V | 20 nC | Enhancement | ||||
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1,107
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 71 A | 7.9 mOhms | 3.7 V | 58 nC | StrongIRFET | ||||
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66,300
In-stock
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onsemi | MOSFET NFET SO8FL 40V 68A 6.7MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 8.8 mOhms | 1.2 V | 20 nC | Enhancement | ||||
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767
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 71 A | 6.6 mOhms | 2.1 V | 87 nC | Enhancement | StrongIRFET | |||
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121
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 71 A | 3.3 mOhms | 4 V | 90 nC | Enhancement | |||||
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825
In-stock
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onsemi | MOSFET NFET U8FL 30V 71A 4.2MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 71 A | 4.2 mOhms | 2.2 V | 26 nC | |||||
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1,500
In-stock
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onsemi | MOSFET NFET SO8FL 40V 68A 6.7MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 8.8 mOhms | 1.2 V | 20 nC | Enhancement | ||||
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208
In-stock
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onsemi | MOSFET NFET SO8FL 60V 71A 6.1MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 8.8 mOhms | 1.2 V | 9 nC | Enhancement | ||||
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3,238
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 71A 38nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 4.8 mOhms | 2 V to 4 V | 38 nC | Enhancement | ||||
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2,000
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 8.5 mOhms | 3.7 V | 58 nC | StrongIRFET | ||||
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9,000
In-stock
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onsemi | MOSFET NFET U8FL 30V 71A 4.2MOHM | WDFN-8 | Reel | Si | N-Channel | 30 V | 71 A | 4.2 mOhms | ||||||||||||
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4,999
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 71 A | 10 mOhms | 1.2 V | 68 nC | Enhancement | OptiMOS | |||
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VIEW | IXYS | MOSFET 80 Amps 200V 0.03 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 71 A | 28 mOhms | Enhancement | HyperFET | |||||
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4,086
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 9.6mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 71 A | 9.6 mOhms | 4 V | 40 nC | Enhancement | ||||
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3
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 13mOhms 62nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 71 A | 13 mOhms | 62 nC | Enhancement |
