- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
849
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3.7 Ohms | 42 nC | Enhancement | ||||
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GET PRICE |
1,197
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3.7 Ohms | 42 nC | Enhancement | ||||
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GET PRICE |
1,027
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5 A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 2.7 Ohms | 42 nC | Enhancement | ||||
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GET PRICE |
1,344
In-stock
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Infineon Technologies | MOSFET 25V DUAL N / P CH 20 VGS MAX V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 25 V | 3.5 A | 160 mOhms | 9.4 nC | Enhancement | ||||
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GET PRICE |
507
In-stock
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STMicroelectronics | MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 3.5 A | 2 Ohms | 4 V | 12.5 nC | ||||
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GET PRICE |
216
In-stock
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IXYS | MOSFET 3.5 Amps 800V 3 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.5 A | 3 Ohms | Enhancement | |||||
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GET PRICE |
150
In-stock
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IXYS | MOSFET 3.5 Amps 800V 3 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.5 A | 3 Ohms | Enhancement | |||||
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GET PRICE |
1,000
In-stock
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STMicroelectronics | MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 3.5 A | 2 Ohms | 4 V | 12.5 nC | ||||
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GET PRICE |
67
In-stock
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Toshiba | MOSFET N-ch 600V 3.5A TO-220SIS | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.5 A | 1.7 Ohms | 2.4 V to 4.4 V | 11 nC | Enhancement | |||
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VIEW | IXYS | MOSFET 3.5 Amps 1000V 3 Rds | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3 Ohms | Enhancement | HyperFET | |||||
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GET PRICE |
1,379
In-stock
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IR / Infineon | MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 150 mOhms | 1 V to 3 V | 10 nC | Enhancement | |||
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GET PRICE |
265
In-stock
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IR / Infineon | MOSFET 30V DUAL N / P CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 3.5 A | 150 mOhms | 6.9 nC | Enhancement | ||||
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GET PRICE |
383
In-stock
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IR / Infineon | MOSFET 30V N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 3.5 A | 200 mOhms | 1 V | 11 nC | Enhancement |
