- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,727
In-stock
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Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 3.5 A | 90 mOhms | Enhancement | PowerTrench | |||||
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14,627
In-stock
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Toshiba | MOSFET SM Sig N-CH MOS 30V 3.5A 12V VGSS | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 3.5 A | 290 mOhms | |||||||||
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2,958
In-stock
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Diodes Incorporated | MOSFET 30V N Chnl UMOS | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.5 A | 140 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 3.5A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 3.5 A | 200 mOhms | 6.9 nC | ||||||||
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4,895
In-stock
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onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-563-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.5 A | 128 mOhms | 1.2 V | 5.6 nC | Enhancement | |||||
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4,730
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | SCH-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.5 A | 72 mOhms | |||||||
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383
In-stock
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IR / Infineon | MOSFET 30V N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 3.5 A | 200 mOhms | 1 V | 11 nC | Enhancement |
