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- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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67
In-stock
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Toshiba | MOSFET N-ch 600V 3.5A TO-220SIS | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.5 A | 1.7 Ohms | 2.4 V to 4.4 V | 11 nC | Enhancement | ||
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383
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IR / Infineon | MOSFET 30V N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 3.5 A | 200 mOhms | 1 V | 11 nC | Enhancement |
