- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
6,946
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.5 A | 100 mOhms | Enhancement | PowerTrench | ||||||
|
10,727
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 3.5 A | 90 mOhms | Enhancement | PowerTrench | ||||||
|
4,760
In-stock
|
Fairchild Semiconductor | MOSFET Dl N-Ch Enhancement | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.5 A | 76 mOhms | Enhancement | |||||||
|
4,000
In-stock
|
Fairchild Semiconductor | MOSFET 100V Dual N-Channel PowerTrench MOSFET | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 3.5 A | 62 mOhms | 5.1 nC | PowerTrench | ||||||||
|
4,981
In-stock
|
Infineon Technologies | MOSFET MOSFT DUAL N/PCh 30V 3.5A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 3.5 A | 150 mOhms | 6.9 nC | |||||||||
|
5,945
In-stock
|
IR / Infineon | MOSFET MOSFT DUAL NCh 20V 3.5A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 150 mOhms | 3 V | 15 nC | ||||||
|
5,229
In-stock
|
Infineon Technologies | MOSFET MOSFT DUAL N/PCh 25V 3.5A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 25 V | 3.5 A | 160 mOhms | 9.4 nC | |||||||||
|
1,344
In-stock
|
Infineon Technologies | MOSFET 25V DUAL N / P CH 20 VGS MAX V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 25 V | 3.5 A | 160 mOhms | 9.4 nC | Enhancement | ||||||
|
2,155
In-stock
|
onsemi | MOSFET NFET 20V 3A 70MOHM TSOP6 | 12 V | SMD/SMT | TSOP-6 | - 50 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 58 mOhms | Enhancement | |||||||
|
VIEW | Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 3.5A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 3.5 A | 200 mOhms | 6.9 nC | |||||||||
|
VIEW | IR / Infineon | MOSFET AUTO 30V 1 N-CH HEXFET 100mOhms | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 3.5 A | 150 mOhms | 6.9 nC | |||||||||
|
VIEW | Fairchild Semiconductor | MOSFET 60V Dual N-Channel LogicLevel PwrMOSFET | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.5 A | 90 mOhms | Enhancement | ||||||||
|
1,379
In-stock
|
IR / Infineon | MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 3.5 A | 150 mOhms | 1 V to 3 V | 10 nC | Enhancement | |||||
|
265
In-stock
|
IR / Infineon | MOSFET 30V DUAL N / P CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V | 3.5 A | 150 mOhms | 6.9 nC | Enhancement | ||||||
|
383
In-stock
|
IR / Infineon | MOSFET 30V N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 3.5 A | 200 mOhms | 1 V | 11 nC | Enhancement |