Build a global manufacturer and supplier trusted trading platform.
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STF5NK100Z
GET PRICE
RFQ
849
In-stock
STMicroelectronics MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 3.5 A 3.7 Ohms   42 nC Enhancement
STP5NK100Z
GET PRICE
RFQ
1,197
In-stock
STMicroelectronics MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 3.5 A 3.7 Ohms   42 nC Enhancement
STP5N95K5
GET PRICE
RFQ
507
In-stock
STMicroelectronics MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 950 V 3.5 A 2 Ohms 4 V 12.5 nC  
IXTP4N80P
GET PRICE
RFQ
216
In-stock
IXYS MOSFET 3.5 Amps 800V 3 Rds 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 3.5 A 3 Ohms     Enhancement
STF5N95K5
GET PRICE
RFQ
1,000
In-stock
STMicroelectronics MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 950 V 3.5 A 2 Ohms 4 V 12.5 nC  
Page 1 / 1