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5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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805
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 210 A | 2.8 mOhms | 2 V | 79 nC | Enhancement | PowerTrench | |||
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927
In-stock
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IR / Infineon | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 4 V | 120 nC | |||||
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800
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 220A 3.3mOhm 190nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 210 A | 3.3 mOhms | 4 V | 190 nC | |||||
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645
In-stock
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IR / Infineon | MOSFET 60V 210A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 25V SINGLE N-CH 20V VGS MAX | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 210 A | 1.8 mOhms | 45 nC | Directfet |