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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFB210N30P3
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738
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IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 20 V Through Hole PLUS-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 300 V 210 A 14.5 mOhms 5 V 268 nC Enhancement Polar3, HiperFET
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