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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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927
In-stock
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IR / Infineon | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 4 V | 120 nC | ||
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450
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 3mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC |
