- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
805
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 210 A | 2.8 mOhms | 2 V | 79 nC | Enhancement | PowerTrench | ||
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GET PRICE |
1,701
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 210 A | 2.8 mOhms | 209 nC | Enhancement | ||||
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GET PRICE |
927
In-stock
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IR / Infineon | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 4 V | 120 nC | ||||
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GET PRICE |
128
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 210 A | 2.6 mOhms | 4 V | 190 nC | Enhancement | |||
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GET PRICE |
250
In-stock
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Infineon Technologies | MOSFET 60V 210A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | ||||||||
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GET PRICE |
7
In-stock
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IXYS | MOSFET 210 Amps 200V 0.0105 Rds | 20 V | Through Hole | PLUS-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 210 A | 10.5 mOhms | HyperFET | |||||
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GET PRICE |
800
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 220A 3.3mOhm 190nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 210 A | 3.3 mOhms | 4 V | 190 nC | ||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 210 A | 2.8 mOhms | 209 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 60V 210A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | ||||||||
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GET PRICE |
645
In-stock
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IR / Infineon | MOSFET 60V 210A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC |
