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Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
9 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFX48N60P
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IXYS MOSFET 600V 48A 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 48 A 135 mOhms     Enhancement HyperFET
IXFX48N60Q3
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30
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IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A 30 V Through Hole TO-247-3     Tube 1 Channel Si N-Channel 600 V 48 A 140 mOhms   140 nC   HyperFET
IXTP48N20T
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65
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IXYS MOSFET 48 Amps 200V 50 Rds 30 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 200 V 48 A 50 mOhms     Enhancement  
APT30M70BVRG
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42
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Microsemi MOSFET Power MOSFET - MOS5 30 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 300 V 48 A 70 mOhms 2 V 225 nC Enhancement  
IXFR80N60P3
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IXYS MOSFET Polar3 HiPerFET Power MOSFET 30 V Through Hole TO-247-3 - 55 C + 150 C Tube   Si N-Channel 600 V 48 A 76 mOhms 5 V 190 nC Enhancement Polar3, HiperFET
IXTQ48N20T
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IXYS MOSFET 48 Amps 200V 50 Rds 30 V Through Hole TO-3P-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 200 V 48 A 50 mOhms 4.5 V 60 nC Enhancement Trench
IXTA48N20T
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2
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IXYS MOSFET 48 Amps 200V 50 Rds 30 V SMD/SMT TO-263-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 200 V 48 A 50 mOhms     Enhancement  
IXFK48N60Q3
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IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A 30 V Through Hole TO-264-3     Tube 1 Channel Si N-Channel 600 V 48 A 140 mOhms   140 nC   HyperFET
IXFK48N60P
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IXYS MOSFET 600V 48A 30 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 48 A 135 mOhms     Enhancement HyperFET
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