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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,950
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 82A 13mOhm 106.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 106.7 nC | ||||||||
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GET PRICE |
8,000
In-stock
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IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | Enhancement | |||||
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25
In-stock
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IXYS | MOSFET 82 Amps 600V 0.75 Ohm Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 82 A | 75 mOhms | 5 V | 240 nC | Enhancement | PolarHV, HiPerFET | |||
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8,000
In-stock
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IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | |||
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50
In-stock
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Toshiba | MOSFET N-Ch 40V 4670pF 63.4nC 82A 36W | 20 V | Through Hole | TO-220FP-3 | + 175 C | 1 Channel | Si | N-Channel | 40 V | 82 A | 2.5 mOhms | 1.4 V | 63.4 nC | Enhancement | ||||||
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25
In-stock
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IXYS | MOSFET 82 Amps 600V 0.78 Ohm Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 82 A | 78 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET | |||
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25
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 82 A | 75 mOhms | 275 nC | HyperFET |
