- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
2,461
In-stock
|
Vishay Semiconductors | MOSFET 40V 30A 48W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 0.0077 Ohms, 0.0077 Ohms | 1.5 V, 1.5 V | 38 nC, 38 nC | Enhancement | TrenchFET | ||
|
|
GET PRICE |
2,780
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 30 A, 30 A | 21 mOhms, 21 mOhms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | |||
|
|
GET PRICE |
2,925
In-stock
|
Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 30 A, 30 A | 10 mOhms, 10 mOhms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | |||
|
|
GET PRICE |
1,978
In-stock
|
Siliconix / Vishay | MOSFET Dual N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 6.3 mOhms, 6.3 mOhms | 1.2 V, 1.2 V | 35 nC, 35 nC | Enhancement | |||
|
|
GET PRICE |
2,848
In-stock
|
Siliconix / Vishay | MOSFET N-Ch 60V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 30 A, 30 A | 10.5 mOhms, 10.5 mOhms | 2.5 V, 2.5 V | 35 nC, 35 nC | Enhancement | |||
|
|
GET PRICE |
3,000
In-stock
|
Siliconix / Vishay | MOSFET Dual N-Ch 80V Vds AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V, 80 V | 30 A, 30 A | 17.9 mOhms, 17.9 mOhms | 2.5 V, 2.5 V | 25 nC, 25 nC | Enhancement | |||
|
|
GET PRICE |
3,000
In-stock
|
Siliconix / Vishay | MOSFET Dual N-Channel 40V PowerPAK | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V, 40 V | 30 A, 30 A | 0.0079 Ohms, 0.0079 Ohms | 2.5 V, 2.5 V | 30 nC, 30 nC | Enhancement | |||
|
|
GET PRICE |
3,000
In-stock
|
Vishay Semiconductors | MOSFET 80V Vds 30A Id AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V, 80 V | 30 A, 30 A | 15.5 mOhms, 15.5 mOhms | 1.5 V, 1.5 V | 32 nC, 32 nC | Enhancement | |||
|
|
VIEW | Vishay Semiconductors | MOSFET Dual N-Channel 30V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 30 A, 30 A | 0.0058 Ohms, 0.0058 Ohms | 1.5 V, 1.5 V | 39 nC, 39 nC | Enhancement | TrenchFET | |||
|
|
GET PRICE |
3,803
In-stock
|
Infineon Technologies | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V, 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V, 25 V | 30 A, 30 A | 4.6 mOhms, 2.1 mOhms | 1.1 V, 1.1 V | 10 nC, 23 nC | Enhancement | FastIRFet |
