- Manufacture :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,904
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 5A DSO-8 OptiMOS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5 A, 5 A | 31 mOhms, 31 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | OptiMOS | ||||
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2,400
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 5A DSO-8 OptiMOS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5 A, 5 A | 31 mOhms, 31 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | |||||
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2,519
In-stock
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Diodes Incorporated | MOSFET 60V Dual N-Ch FET 40mOhm 10V 5.0A | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V, 60 V | 5 A, 5 A | 30 mOhms, 30 mOhms | 1 V, 1 V | 22.4 nC, 22.4 nC | Enhancement |