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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSO604NS2
1+
$1.010
10+
$0.860
100+
$0.660
500+
$0.584
2500+
$0.409
RFQ
1,904
In-stock
Infineon Technologies MOSFET N-Ch 55V 5A DSO-8 OptiMOS 20 V, 20 V SMD/SMT SO-8 - 55 C + 150 C Reel 2 Channel Si N-Channel 55 V, 55 V 5 A, 5 A 31 mOhms, 31 mOhms 1.2 V, 1.2 V 26 nC, 26 nC Enhancement OptiMOS
BSO604NS2XUMA1
1+
$1.010
10+
$0.860
100+
$0.660
500+
$0.584
2500+
$0.409
RFQ
2,400
In-stock
Infineon Technologies MOSFET N-Ch 55V 5A DSO-8 OptiMOS 20 V, 20 V SMD/SMT SO-8 - 55 C + 150 C Reel 2 Channel Si N-Channel 55 V, 55 V 5 A, 5 A 31 mOhms, 31 mOhms 1.2 V, 1.2 V 26 nC, 26 nC Enhancement  
DMN6040SSDQ-13
1+
$0.600
10+
$0.497
100+
$0.303
1000+
$0.234
2500+
$0.200
RFQ
2,519
In-stock
Diodes Incorporated MOSFET 60V Dual N-Ch FET 40mOhm 10V 5.0A 20 V, 20 V SMD/SMT SO-8 - 55 C + 150 C Reel 2 Channel Si N-Channel 60 V, 60 V 5 A, 5 A 30 mOhms, 30 mOhms 1 V, 1 V 22.4 nC, 22.4 nC Enhancement  
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