- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,000
In-stock
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STMicroelectronics | MOSFET | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | |||||
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2,766
In-stock
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Fairchild Semiconductor | MOSFET Trans N-Ch 600V 7A 3-Pin 2+Tab | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | SuperFET | ||||||
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2,500
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | ||||||
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2,242
In-stock
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STMicroelectronics | MOSFET N-Ch 42V 7A OmniFET | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 42 V | 7 A | 140 mOhms | ||||||||||||
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1,972
In-stock
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Fairchild Semiconductor | MOSFET N-CH/600V/7A SuperFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | |||||||
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891
In-stock
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Siliconix / Vishay | MOSFET N-Channel 250V AEC-Q101 Qualified | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7 A | 0.29 Ohms | 2.5 V | 29 nC | Enhancement | TrenchFET | ||||
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86,000
In-stock
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Toshiba | MOSFET N-Ch 7A 60W FET 600V 490pF 15nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 500 mOhms | 2.7 V to 3.7 V | 15 nC | Enhancement | |||||
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1,865
In-stock
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Toshiba | MOSFET UMOSVIII 100V 48m max(VGS=10V) DPAK | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 48 mOhms | ||||||||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.56 Ohm MDmesh M5 7A 710VDss | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7 A | 560 mOhms | ||||||||
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86,000
In-stock
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Toshiba | MOSFET DTMOSIV 600V 600mOhm DPKw/Hgh Speed Diode | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 540 mOhms | 4.5 V | 16 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 42V 7A OmniFET | SMD/SMT | TO-252-3 | Tube | Si | N-Channel | 42 V | 7 A | 140 mOhms | ||||||||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 7A 500V 100W 600pF 1.22 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 7 A | 1.22 Ohms | |||||||||||
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1,280
In-stock
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STMicroelectronics | MOSFET N-Ch 200 Volt 7 Amp | 20 V | SMD/SMT | TO-252-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 350 mOhms | Enhancement | |||||||
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2,761
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 300 mOhms | 2.1 V | 31.5 nC | Enhancement | SIPMOS | ||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 300 mOhms | 2.1 V | 31.5 nC | Enhancement | OptiMOS |