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- Vgs - Gate-Source Voltage :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,965
In-stock
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Siliconix / Vishay | MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 14 nC | Enhancement | TrenchFET | |||
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891
In-stock
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Siliconix / Vishay | MOSFET N-Channel 250V AEC-Q101 Qualified | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7 A | 0.29 Ohms | 2.5 V | 29 nC | Enhancement | TrenchFET | |||
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726
In-stock
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IR / Infineon | MOSFET Automotive MOSFET 7 mOhm, 56 nC Qg, IPAK | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 56 V | 7 A | 7 mOhms | 56 nC | Enhancement | |||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 12 nC | Enhancement | ||||
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2,761
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 300 mOhms | 2.1 V | 31.5 nC | Enhancement | SIPMOS | |||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 300 mOhms | 2.1 V | 31.5 nC | Enhancement | OptiMOS |
