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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FCP165N60E
1+
$4.590
10+
$3.910
100+
$3.390
250+
$3.210
RFQ
307
In-stock
Fairchild Semiconductor MOSFET 600V 23A N-Chnl SuperFET Easy-Drive 20 V, 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 23 A 165 mOhms 2.5 V 57 nC Enhancement SuperFET II
FCH165N60E
1+
$5.670
10+
$4.820
100+
$4.180
250+
$3.970
RFQ
196
In-stock
Fairchild Semiconductor MOSFET 600V 23A N-Chnl SuperFET Easy-Drive 20 V, 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 23 A 165 mOhms 2.5 V 57 nC Enhancement SuperFET II
FCPF220N80
1+
$5.350
10+
$4.550
100+
$3.940
250+
$3.740
RFQ
210
In-stock
Fairchild Semiconductor MOSFET SuperFET2 800V 220mOhm, max die of TO220F PKG 20 V, 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 23 A 220 mOhms 2.5 V 78 nC Enhancement SuperFET II
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