- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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- 108 mOhms (3)
- 120 mOhms (1)
- 125 mOhms (1)
- 160 mOhms (1)
- 18 mOhms (1)
- 2 mOhms (1)
- 2.5 mOhms (1)
- 200 mOhms (5)
- 22 mOhms (1)
- 230 mOhms (4)
- 24 mOhms (3)
- 240 mOhms (3)
- 240 mOhms (1)
- 25 mOhms (1)
- 250 mOhms (4)
- 270 mOhms (5)
- 300 mOhms (1)
- 33.4 mOhms (1)
- 33.5 mOhms (1)
- 4.4 mOhms (1)
- 40 mOhms (2)
- 42 mOhms (1)
- 44 mOhms (1)
- 5 mOhms (1)
- 500 mOhms (2)
- 55 mOhms (1)
- Qg - Gate Charge :
- Applied Filters :
48 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,492
In-stock
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IXYS | MOSFET HiPERFET Id26 BVdass500 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | Enhancement | HyperFET | |||||
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14,172
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 24 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 26 A | 55 mOhms | Enhancement | ||||||
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3,507
In-stock
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Fairchild Semiconductor | MOSFET 30V 42A 2.5mohms NCh PowerTrench MOSFET | SMD/SMT | Power-56-8 | + 150 C | Reel | Si | N-Channel | 30 V | 26 A | 2.5 mOhms | PowerTrench | |||||||||
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3,415
In-stock
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Fairchild Semiconductor | MOSFET PT5 100/20V NCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 26 A | 33.5 mOhms | PowerTrench | ||||||
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930
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.108Ohm 26A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 108 mOhms | 3 V | 45.5 nC | |||||
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5,727
In-stock
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onsemi | MOSFET NFET SO8FL 60V 26A 24MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 26 A | 18 mOhms | 2.5 V | 17 nC | |||||
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GET PRICE |
41,177
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 26 A | 125 mOhms | 3 V | 45.5 nC | Enhancement | |||
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2,503
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 0.0039 Ohm 26A STripFET VI DG | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 26 A | 4.4 mOhms | |||||||
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886
In-stock
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STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 26 A | 120 mOhms | 4 V | 44 nC | Enhancement | ||||
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25,000
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 26A 40mOhm 22.7nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 26 A | 40 mOhms | 22.7 nC | ||||||||
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2,331
In-stock
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Fairchild Semiconductor | MOSFET NCh150V,26A,42m ohms PowerTrench MOSFET | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 26 A | 33.4 mOhms | PowerTrench | |||||||
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815
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 26 A | 160 mOhms | Enhancement | UniFET | |||||
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480
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 108 mOhms | 3 V | 45.5 nC | |||||
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313
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2 | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 108 mOhms | 3 V | 45.5 nC | |||||
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276
In-stock
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IXYS | MOSFET 600V 26A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | HyperFET | |||||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 26 A | 22 mOhms | 1.5 V | 30 nC | Enhancement | ||||
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600
In-stock
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IXYS | MOSFET 32 Amps 1200V 0.46 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 26 A | 500 mOhms | 6.5 V | 255 nC | Enhancement | Polar, HiPerFET | |||
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75
In-stock
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IXYS | MOSFET 26 Amps 1200V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 26 A | 500 mOhms | 6.5 V | 255 nC | Enhancement | Polar, HiPerFET | |||
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494
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 16 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 26 A | 42 mOhms | Enhancement | ||||||
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441
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 26A 22mOhm 73nC | 30 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 26 A | 25 mOhms | 73 nC | Enhancement | |||||
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79
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 240 mOhms | 5 V | 42 nC | Enhancement | Polar3, HiperFET | |||
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1,136
In-stock
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onsemi | MOSFET NFET S08FL 30V 74A 5mOhm | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 26 A | 5 mOhms | Enhancement | ||||||
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818
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 40mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 26 A | 40 mOhms | 22.7 nC | Enhancement | ||||||
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424
In-stock
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Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 26 A | 2 mOhms | 1.7 V | 41 nC | Enhancement | PowerTrench SyncFET | ||||
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30
In-stock
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IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | 5 V | 72 nC | Enhancement | PolarHV | |||
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47
In-stock
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IXYS | MOSFET 26.0 Amps 500 V 0.23 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | Enhancement | ||||||
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20
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-220-3 | Tube | Si | N-Channel | 500 V | 26 A | 240 mOhms | HyperFET | ||||||||||
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19
In-stock
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IXYS | MOSFET 900V 26A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 26 A | 300 mOhms | Enhancement | HyperFET | |||||
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4
In-stock
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IXYS | MOSFET 600V 26A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 250 mOhms | Enhancement | HyperFET | |||||
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120
In-stock
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IXYS | MOSFET 600V 26A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | HyperFET |
