Build a global manufacturer and supplier trusted trading platform.
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
IXFH26N60Q
1+
$12.200
10+
$11.220
25+
$10.750
100+
$9.480
RFQ
4
In-stock
IXYS MOSFET 600V 26A 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 26 A 250 mOhms Enhancement HyperFET
IXFH26N50
90+
$8.180
120+
$7.110
270+
$6.790
510+
$6.190
VIEW
RFQ
IXYS MOSFET DIODE Id26 BVdass500 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 26 A 200 mOhms Enhancement HyperFET
IXFH26N50Q
90+
$8.180
120+
$7.110
270+
$6.790
510+
$6.190
VIEW
RFQ
IXYS MOSFET 500V 26A 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 26 A 200 mOhms Enhancement HyperFET
IXFX26N60Q
30+
$12.120
120+
$10.680
270+
$10.160
510+
$9.500
VIEW
RFQ
IXYS MOSFET 28 Amps 600V 0.25 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 26 A 250 mOhms Enhancement HyperFET
IXFR26N50
30+
$9.330
120+
$8.100
270+
$7.740
510+
$7.060
VIEW
RFQ
IXYS MOSFET 24 Amps 500V 0.2 Rds 20 V SMD/SMT TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 26 A 200 mOhms Enhancement HyperFET
Page 1 / 1