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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
327
In-stock
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IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 128 A | 4.8 mOhms | 2 V | 188 nC | Enhancement | |||
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GET PRICE |
410
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 120A 5.8mOhm 79nC Qg | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 128 A | 5.8 mOhms | 4 V | 110 nC | ||||||
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GET PRICE |
31
In-stock
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Toshiba | MOSFET N-Ch 40V 4670pF 63.4nC 128A 87W | 20 V | Through Hole | TO-220-3 | + 175 C | 1 Channel | Si | N-Channel | 40 V | 128 A | 2.5 mOhms | 1.4 V | 63.4 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 75V 120A 5.8 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 75 V | 128 A | 4.6 mOhms | 79 nC | |||||||||
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VIEW | IXYS | MOSFET 128 Amps 150V 0.015 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 128 A | 15 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET 75V 120A 5.8 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 75 V | 128 A | 4.6 mOhms | 79 nC | |||||||||
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GET PRICE |
2,294
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 128 A | 4.8 mOhms | 2 V | 36 nC | Enhancement | StrongIRFET | ||
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VIEW | IR / Infineon | MOSFET 75V 120A 5.8 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 75 V | 128 A | 4.6 mOhms | 79 nC |
