- Vgs - Gate-Source Voltage :
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38 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Qualification | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | Minimum Operating | |
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GET PRICE |
30,000
In-stock
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onsemi | MOSFET MV8 P INITIAL PROGRAM | - 20 V, + 20 V | Tape & Reel (TR) | AEC-Q101 | 1 Channel | 75 W | P-Channel | 40 V | 64 A | 9.5 mOhms | 2.4 V | 34.6 nC | WDFN-8 | 3000 | Green available | - 55 C + 175 C | |||||||||
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23,800
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||||||||
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20,530
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||||||||
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2,719
In-stock
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Fairchild Semiconductor | MOSFET PT5 120/20V Nch Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 64 A | 6 mOhms | 2 V | 45 nC | Enhancement | PowerTrench Power Clip | |||||||||
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GET PRICE |
13,610
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 89 nC | Enhancement | |||||||||
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300
In-stock
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IXYS | MOSFET 64.0 Amps 500 V 0.09 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 5.5 V | 150 nC | Enhancement | PolarHV, HiPerFET | |||||||||
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1,697
In-stock
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Infineon Technologies | MOSFET 25V Dual N-Ch 1.45mOhm 31nC 45A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 64 A | 3.2 mOhms | 1.6 V | 15 nC, 47 nC | Enhancement | FastIRFet | |||||||||
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2,247
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 16 mOhms | 4 V | 89 nC | Enhancement | ||||||||||
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910
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 89 nC | Enhancement | ||||||||||
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41,000
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||||||||
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260
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 64 A | 51 mOhms | 3 V | 143 nC | Enhancement | ||||||||||
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3,500
In-stock
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IXYS | MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 5 V | 145 nC | HyperFET | ||||||||||||
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2,454
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 64 A | 16 mOhms | 22 nC | Enhancement | |||||||||||
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60
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 145 nC | HyperFET | |||||||||||||
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377
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 64A 14mOhm 54nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 54 nC | ||||||||||||||
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468
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 64A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 64 A | 4.5 mOhms | 28 nC | Enhancement | OptiMOS | ||||||||||
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797
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 64A 14mOhm 54nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 4 V | 81 nC | |||||||||||
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29
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | ||||||||||
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28
In-stock
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IXYS | MOSFET 500V 64A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | Enhancement | HyperFET | |||||||||||
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1,246
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement | OptiMOS | |||||||||
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70
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | LinearL2 | ||||||||||
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58
In-stock
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IXYS | MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 64 A | 95 mOhms | 5 V | 145 nC | HyperFET | ||||||||||||
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115
In-stock
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IR / Infineon | MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 64 A | 3.2 mOhms | 1.6 V | 15 nC, 66 nC | Enhancement | FastIRFet | |||||||||
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25
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 145 nC | HyperFET | |||||||||||||
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49
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 64 A | 5.5 mOhms | 2.1 V | 21 nC | Enhancement | ||||||||||
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2
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 14mOhms 54nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 2 V to 4 V | 54 nC | Enhancement | ||||||||||
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18
In-stock
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IXYS | MOSFET 64 Amps 250V 0.049 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 49 mOhms | Enhancement | ||||||||||||
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997
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||||||||
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800
In-stock
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Siliconix / Vishay | MOSFET N-Channel 200V D2PAK (TO-263) | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 64 A | 0.018 Ohms | 2 V | 48 nC | Enhancement | |||||||||||
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490
In-stock
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Siliconix / Vishay | MOSFET N-Channel 200V TO-220 | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 64 A | 0.018 Ohms | 2 V | 48 nC | Enhancement |
