- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
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11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
26,900
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 39A 36mOhm 73.3nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 39 A | 36 mOhms | 73.3 nC | ||||||||
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2,429
In-stock
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Fairchild Semiconductor | MOSFET SINGLE N-CH 200V ULTRAFET TRENCH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 39 A | 66 mOhms | Enhancement | |||||||
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641
In-stock
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Fairchild Semiconductor | MOSFET 200V N-CH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 39 A | 56 mOhms | Enhancement | |||||||
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197
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 39A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 39 A | 68 mOhms | 2.5 V | 116 nC | Enhancement | CoolMOS | ||||
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230
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 39A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 39 A | 68 mOhms | 2.5 V | 116 nC | Enhancement | CoolMOS | ||||
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838
In-stock
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IR / Infineon | MOSFET 80V 30A 28 mOhm Auto Logic Level MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | Si | N-Channel | 80 V | 39 A | 22.5 mOhms | 22 nC | ||||||||||
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4
In-stock
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IXYS | MOSFET 36 Amps 800V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 39 A | 190 mOhms | 5 V | 200 nC | Enhancement | PolarHV, HiPerFET | ||||
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VIEW | IXYS | MOSFET 44 Amps 500V 0.12 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 39 A | 120 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 44 Amps 500V 0.12 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 39 A | 120 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 44 Amps 500V 0.12 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 39 A | 120 mOhms | Enhancement | |||||||
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545
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 0.055 Ohm 39A Mdmesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 39 A | 70 mOhms |