- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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175
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 98A 23mOhm 160nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 98 A | 23 mOhms | 160 nC | Enhancement | ||||
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353
In-stock
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Infineon Technologies | MOSFET 55V, 98A, 8mOhm Automotive MOSFET | Through Hole | TO-220-3 | Tube | Si | N-Channel | 55 V | 98 A | 8 mOhms | 97.3 nC | |||||||||
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288
In-stock
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onsemi | MOSFET NFET TO220 60V 2.5A 300 | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 98 A | 3 mOhms | |||||||
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365
In-stock
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onsemi | MOSFET 60V T2 TO220 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 98 A | 5.7 mOhms | 4 V | 82 nC | ||||
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10
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 98 A | 6.9 mOhms | 1.4 V | 53.7 nC | Enhancement | |||
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VIEW | IXYS | MOSFET 98 Amps 200V 26 Rds | Through Hole | TO-220-3 | Tube | Si | N-Channel | 200 V | 98 A | 26 Ohms | ||||||||||
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537
In-stock
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STMicroelectronics | MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 68 V | 98 A | 9.8 mOhms | 4 V | 75 nC | Enhancement |
