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Vgs - Gate-Source Voltage :
Packaging :
Vds - Drain-Source Breakdown Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
STP25NM60ND
1+
$6.870
10+
$6.210
25+
$5.930
100+
$5.150
RFQ
437
In-stock
STMicroelectronics MOSFET N-channel 600V, 21A FDMesh II 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 21 A 160 mOhms Enhancement  
FQP22N30
1+
$1.970
10+
$1.680
100+
$1.340
500+
$1.180
RFQ
798
In-stock
Fairchild Semiconductor MOSFET 300V N-Channel QFET 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 300 V 21 A 160 mOhms Enhancement QFET
STW25NM60ND
1+
$8.250
10+
$7.460
25+
$7.110
100+
$6.170
RFQ
285
In-stock
STMicroelectronics MOSFET N-channel 600V, 21A FDMesh II 25 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 21 A 160 mOhms Enhancement  
STF25NM60ND
1+
$5.300
10+
$4.500
100+
$3.900
250+
$3.700
RFQ
219
In-stock
STMicroelectronics MOSFET N-Ch, 600V-0.13ohms FDMesh 21A 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 21 A 160 mOhms Enhancement  
STB25NM60ND
1+
$7.000
10+
$6.330
25+
$6.030
100+
$5.240
1000+
$3.970
RFQ
1,000
In-stock
STMicroelectronics MOSFET N-channel 600V, 21A FDMesh II 25 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 21 A 160 mOhms Enhancement  
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