- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
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33 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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437
In-stock
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STMicroelectronics | MOSFET N-channel 600V, 21A FDMesh II | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 160 mOhms | Enhancement | |||||||
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608
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.135 21A MDmesh II | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 158 mOhms | 4 V | 50 nC | |||||||
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894
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.135 Ohm MDmesh II Power MO | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 158 mOhms | 50 nC | Enhancement | ||||||
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12,500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | ||||
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1,469
In-stock
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Infineon Technologies | MOSFET N-Ch 560V 21A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 190 mOhms | 3 V | 95 nC | CoolMOS | |||||
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798
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 21 A | 160 mOhms | Enhancement | QFET | ||||||
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17,930
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 21A 70mOhm 63.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 21 A | 70 mOhms | 63.3 nC | |||||||||
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285
In-stock
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STMicroelectronics | MOSFET N-channel 600V, 21A FDMesh II | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 160 mOhms | Enhancement | |||||||
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417
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 21A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 190 mOhms | Enhancement | CoolMOS | ||||||
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459
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 21A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 190 mOhms | Enhancement | CoolMOS | ||||||
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248
In-stock
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Fairchild Semiconductor | MOSFET 60V NCHAN PwrTrench | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 21 A | 20 mOhms | PowerTrench | |||||||||
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594
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 21A TO220FP-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 21 A | 100 mOhms | 2.1 V | - | Enhancement | SIPMOS | ||||
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808
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 21A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 21 A | 53 mOhms | OptiMOS | |||||||
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65
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 21A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 165 mOhms | Enhancement | CoolMOS | ||||||
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219
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-0.13ohms FDMesh 21A | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 160 mOhms | Enhancement | |||||||
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60
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 21 A | 0.13 Ohms | 3 V | 34 nC | Enhancement | ||||||
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300
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | ||||
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495
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 21A TO220FP-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 21 A | 100 mOhms | 2.1 V | - | Enhancement | OptiMOS | ||||
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17
In-stock
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IXYS | MOSFET 21 Amps 500V | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 220 mOhms | 4.5 V | 95 nC | Enhancement | ISOPLUS i4-PAC | ||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 21A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 21 A | 165 mOhms | 9 nC | Enhancement | CoolMOS | |||||
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1,000
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 21 A | 42 mOhms | Enhancement | QFET | ||||||
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VIEW | IXYS | MOSFET 40 Amps 1100V 0.2800 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 21 A | 280 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 21 Amps 100V 0.55 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 21 A | 550 mOhms | Enhancement | |||||||
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VIEW | STMicroelectronics | MOSFET N-channel 600 V FDMesh | Through Hole | TO-247-3 | Tube | Si | N-Channel | 600 V | 21 A | 130 mOhms | ||||||||||||
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VIEW | IXYS | MOSFET 500V 21A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 250 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 21 Amps 1000V 0.5 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 21 A | 500 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 21 Amps 500V 0.25 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 250 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 21 Amps 500V 0.25 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 250 mOhms | Enhancement | HyperFET | ||||||
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52,000
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.135 21A MDmesh II | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 158 mOhms | 4 V | 50 nC | |||||||
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6,350
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 145 mOhms | 4 V | 54.6 nC |